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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0685
Features
* Cascadable 50 Gain Block * Low Operating Voltage: 3.5 V Typical Vd * 3 dB Bandwidth: DC to 0.8 GHz * High Gain: 18.5 dB Typical at 0.5 GHz * Low Noise Figure: 3.0 dB Typical at 0.5 GHz * Low Cost Plastic Package
plastic package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
85 Plastic Package
Description
The MSA-0685 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost
Typical Biasing Configuration
R bias VCC > 5 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 3.5 V
2
5965-9587E
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MSA-0685 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 200 mW +13 dBm 150C -65 to 150C Thermal Resistance[2,4]: jc = 110C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 9.1 mW/C for TC > 128C. 4. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 16 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.5 GHz f = 0.1 to 0.5 GHz
Units
dB
Min.
17.0
Typ.
20.0 18.5 0.7 0.8 1.5:1 1.4:1
Max.
dB GHz
dB dBm dBm psec V mV/C 2.8
3.0 2.0 14.5 200 3.5 -8.0 4.2
Note: 1. The recommended operating current range for this device is 12 to 25 mA. Typical performance as a function of current is on the following page.
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MSA-0685 Typical Scattering Parameters (Z = 50 , TA = 25C, Id = 16 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Note:
.04 .02 .02 .03 .05 .07 .10 .13 .21 .29 .34 .41 .46 .49 .52 .54
171 -180 -143 -113 -105 -101 -111 -118 -140 -163 -176 169 157 146 135 123
20.1 29.8 19.4 19.1 18.7 18.2 17.3 16.4 14.1 12.0 10.3 8.7 7.2 6.1 5.0 4.1
10.09 9.75 9.38 8.99 8.57 8.14 7.32 6.57 5.06 3.98 3.26 2.71 2.31 2.01 1.77 1.60
171 161 153 145 138 131 119 107 84 65 55 42 30 18 7 -3
-22.5 -22.4 -22.2 -21.8 -21.3 -20.7 -19.7 -18.8 -17.1 -15.8 -15.2 -14.8 -14.2 -13.8 -13.4 -12.9
.075 .076 .077 .081 .086 .092 .103 .115 .140 .163 .174 .181 .194 .203 .215 .226
5 10 15 17 21 25 28 28 28 26 28 25 22 20 17 15
.04 .05 .07 .08 .10 .11 .13 .14 .15 .16 .16 .15 .13 .10 .09 .09
-30 -56 -76 -91 -104 -116 -134 -150 180 157 150 143 144 156 173 -178
1.04 1.04 1.05 1.04 1.04 1.03 1.01 0.99 1.00 1.02 1.06 1.10 1.11 1.13 1.14 1.14
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
21 Gain Flat to DC 18 15
G p (dB) Id (mA) G p (dB)
25 TC = +85C TC = +25C 20 TC = -25C
25 0.1 GHz 0.5 GHz 20 1.0 GHz 15 2.0 GHz 10
12 9 6 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz)
15
10
5 0 0 1 2 3 Vd (V) 4 5
5
0 10 15 20 25 30 I d (mA)
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
20
Gp (dB)
12 I d = 30 mA GP
P1 dB (dBm)
4.0
19 18 17 8
3.5
NF (dB)
5
P1 dB (dBm)
5 NF P1 dB 4
NF (dB)
4
I d = 20 mA
3.0
4 3 2 1 0 -25 0 +25 +55
3 2 1
I d = 16 mA 0 I d = 12 mA -4 0.1
2.5 I d = 12 mA I d = 16 mA, 30 mA I d = 20 mA 0.1 0.2 0.3 0.5 1.0 2.0 4.0
+85
0
2.0 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz)
TEMPERATURE (C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 0.5 GHz, Id=16mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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85 Plastic Package Dimensions
.020 .51 GROUND 4 0.143 0.015 3.63 0.38
1 RF INPUT
A06
45
3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .006 .002 .15 .05
GROUND .085 2.15
2
.060 .010 1.52 .25
5 TYP.
.07 0.43
.286 .030 7.36 .76
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